Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation

نویسندگان

چکیده

Electronic regulation of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a crucial step towards next-generation optoelectronics and electronics. Here, we demonstrate controllable selective-area defect engineering in 2D molybdenum disulfide (MoS2) using focused ion beam with low-energy gallium (Ga+) source. We find that the surface defects MoS2 can be tuned by precise control energy dose. Furthermore, field-effect transistors based on monolayer show significant threshold voltage modulation over 70 V after Ga+ irradiation. First-principles calculations reveal Ga impurities introduce state near Fermi level, leading to shallow acceptor level 0.25 eV above valence band maximum. This strategy enables direct writing complex pattern at atomic length scale controlled facile manner, tailoring electronic properties TMDCs for novel devices.

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ژورنال

عنوان ژورنال: Science China. Materials

سال: 2021

ISSN: ['2095-8226', '2199-4501']

DOI: https://doi.org/10.1007/s40843-021-1782-y